fairchild - irf 630 mosfet 9a 200v to-220


category: fairchild

quick overview:

product overview
the irf630, 200v n channel mesh overlay ii power mosfet in to-220 package. this power mosfet is designed using the company's consolidated strip layout based mesh overlay process which matches and improves the performances. features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
  • drain to source voltage (vds) is 200v
  • gate to source voltage of ±20v
  • continuous drain current (id) is 9a
  • power dissipation (pd) is 75w
  • operating junction temperature range from -65°c to 150°c
  • gate threshold voltage of 3v
  • low on state resistance of 350mohm at vgs 10v

applications

power management, consumer electronics, portable devices, industrial


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fairchild - irf 630 mosfet 9a 200v to-220


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