the irf630, 200v n channel mesh overlay ii power mosfet in to-220 package. this power mosfet is designed using the company's consolidated strip layout based mesh overlay process which matches and improves the performances. features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
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drain to source voltage (vds) is 200v
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gate to source voltage of ±20v
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continuous drain current (id) is 9a
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power dissipation (pd) is 75w
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operating junction temperature range from -65°c to 150°c
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gate threshold voltage of 3v
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low on state resistance of 350mohm at vgs 10v
applications
power management, consumer electronics, portable devices, industrial